FQD3P50TM-F085 mosfet equivalent, 500v p-channel mosfet.
* -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V
* Low gate charge ( typical 18 nC)
* Low Crss ( typical 9.5 pF)
* Fast switching
* 100% avalanche tested <.
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior.
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